tm december 2006 FDD8750 n-channel powertrench ? mosfet ?2006 fairchild semiconductor corporation FDD8750 rev.c www.fairchildsemi.com 1 FDD8750 n-channel powertrench ? mosfet 25 v, 2.7 a, 40m ? features ? max r ds(on) = 40m ? at v gs = 10v, i d = 2.7a ? max r ds(on) = 60m ? at v gs = 4.5v, i d = 2.7a ? low gate charge: q g(10) = 6nc(typ) ? low gate resistance ? avalanche rated and 100% tested ? rohs compliant general description this n-channel mosfet has been designed specifically to improve the overall effciency of dc/dc converters using either synchronous or conventional sw itching pwm controllers.it has been optimized for low gate charge, low r ds(on) and fast switching speed. application ? low current dc-dc switching ? linear regulation mosfet maximum ratings t c = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 25 v v gs gate to source voltage 20 v i d drain current -continuous(package limited) t c = 25c 2.7 a -continuous(silicon limited) t c = 25c (note 1) 16 -continuous t a = 25c (note 1a) 6.5 -pulsed 14 e as drain-source avalanche energy (note 3) 19 mj p d power dissipation t c = 25c 18 w power dissipation (note 1a) 3.7 t j , t stg operating and storage junction temperature range ?55 to +175 c r jc thermal resistance, junction to case 8 c/w r ja thermal resistance, junction to ambient (note 1a) 40 device marking device package reel size tape width quantity FDD8750 FDD8750 d-pak(to-252) 13?? 12mm 2500 units g s d to-252 d-pak ( to-252 ) s d g
FDD8750 n-channel powertrench ? mosfet FDD8750 rev.c www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 250 p a, v gs = 0v 25 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 250 p a, referenced to 25 c 18 mv/ c i dss zero gate voltage drain current v ds =20v, v gs = 0v 1 p a t j =150 c 250 i gss gate to source leakage current v gs = 20v, v gs = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 p a 1.2 2.0 2.5 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 250 p a, referenced to 25 c -5 mv/ c r ds(on) static drain to source on resistance v gs = 10v, i d = 2.7a 28 40 m : v gs = 4.5v, i d = 2.7a 39 60 v gs = 10v, i d = 2.7a, t j =150 c 44 63 (note 2) dynamic characteristics c iss input capacitance v ds = 13v, v gs = 0v, f = 1mhz 320 425 pf c oss output capacitance 80 110 pf c rss reverse transfer capacitance 50 75 pf r g gate resistance f = 1mhz 1.8 : switching characteristics t d(on) turn-on delay time v dd = 13v, i d = 2.7a v gs = 10v, r gen = 6 : 3 10 ns t r rise time 12 22 ns t d(off) turn-off delay time 8 16 ns t f fall time 5 10 ns q g total gate charge v gs = 0v to 10v v dd =13v i d = 2.7a 6 9 nc q g(5) total gate charge v gs = 0v to 5v 3.4 5 nc q gs gate to source gate charge 1.1 nc q gd gate to drain ?miller? charge 1.2 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 2.7a (note 2) 0.8 1.6 v t rr reverse recovery time i f = 2.7a, di/dt = 100a/ p s 16 24 ns q rr reverse recovery charge 7 11 nc notes: 1: r t ja is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as th e solder mounting surface of the drain pins. r t jc is guaranteed by design while r t ja is determined by the user?s board design. a. 40c/w when mounted on a 1 in 2 pad of 2 oz copper; b. 96c/w when mounted on a minimum pad. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. 3: starting t j = 25c, l = 3mh, i as = 3.6a, v dd = 25v, v gs = 10v.
FDD8750 n-channel powertrench ? mosfet FDD8750 rev.c www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 v gs = 4v v gs = 4.5v v gs = 5v v gs = 10v pulse duration = 80 p s duty cycle = 0.5%max i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 102030405060 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 5v v gs = 4.5v pulse duration = 80 p s duty cycle = 0.5%max normalized drain to source on-resistance i d , drain current(a) v gs = 4v v gs = 10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 175 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i d = 2.7a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 345678910 20 40 60 80 100 pulse duration = 80 p s duty cycle = 0.5%max t j = 150 o c t j = 25 o c i d = 7.4a r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 02468 0 10 20 30 40 pulse duration = 80 p s duty cycle = 0.5%max t j = -55 o c t j = 25 o c t j = 175 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 175 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) 20 s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDD8750 n-channel powertrench ? mosfet FDD8750 rev.c www.fairchildsemi.com 4 figure 7. 02468 0 2 4 6 8 10 i d = 2.7a v dd = 18v v dd = 8v v gs , gate to source voltage(v) q g , gate charge(nc) v dd = 13v gate charge characteristics figure 8. 0.1 1 10 100 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss 30 600 20 c a p a c i t a n c e v s d r a i n to source voltage figure 9. 1e-3 0.01 0.1 1 10 1 2 3 t j = 125 o c t j = 25 o c t j = 150 o c t av , time in avalanche(ms) i as , avalanche current(a) 1 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 175 0 4 8 12 16 20 limited by package r t jc = 8 o c/w v gs =4.5v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.1 1 10 0.1 1 10 dc 10ms 1ms 100us single pulse t j = max rated t c = 25 o c operation in this area may be limited by r ds(on) v ds , drain to source voltage (v) i d , drain current (a) 50 60 figure 12. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 3000 t c = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 175 t c ? 150 ---------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDD8750 n-channel powertrench ? mosfet FDD8750 rev.c www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t jc t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t jc x r t jc + t c typical characteristics t j = 25c unless otherwise noted
FDD8750 rev. c www.fairchildsemi.com 6 FDD8750 n-channel powertrench ? mosfet trademarks the following are registered and unregister ed trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliabilit y, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these spec ifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically th e warranty therein, whi ch covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or sys tems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact ? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc ? unifet? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first produc tion this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. rev. i22
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